Excited electron transfer across semiconductor-molecule heterogeneous interfaces is central to various future electronic and optoelectronic devices. At the same time, first-principles modeling of such dynamical processes remains as a great challenge in theoretical chemistry and condensed matter physics for developing better understanding at the molecular scale. Excited electron transfer from a molecule to semiconductor surface is a particularly difficult case to model accurately because the initial state of such an electron injection process often lies deep within the dense manifold of the conduction band states in the semiconductor. Nonadiabatic couplings and energy level alignments at such interfaces as well as the finite size error of the surface model all play important roles in numerical modeling of electron injection via first-principles theory. Using representative interfaces between a well-defined hydrogen-terminated Si(111) surface and series of covalently-adsorbed conjugated molecules, we investigate the extent to which these theoretical and numerical considerations influence the description of electron injection at a semiconductor-molecule interface.
Li, L.; Kanai, Y. Modeling Electron Injection at Semiconductor-Molecule Interfaces using First-Principles Dynamics Simulation: Effects of Nonadiabatic Coupling, Self-energy, and Surface Models. J. Phys. Chem. C 2019, 123 (21), 13295-13303. http://dx.doi.org/10.1021/acs.jpcc.9b01820